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类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 触点镀层 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 供应商器件包装 | 质量 | 晶体管元件材料 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度（摄氏度） | 功能数量 | 端子间距 | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 输出的数量 | 资历状况 | 输出电压 | 最大输出电流 | 输入电压-Nom | 配置 | 通道数量 | 模拟 IC - 其他类型 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | 输入电压(最大) | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)（最大值） | 无卤素 | 每个通道的输出电流 | 控制技术 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 供应电流-最大值(Isup) | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间（典型值） | 切换器配置 | 连续放电电流(ID) | 阈值电压 | 栅极至源极电压(Vgs) | 最大双电源电压 | 开关频率-最大值 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | 输入电容 | DS 击穿电压-最小值 | 场效应管技术 | 最大结点温度（Tj） | 场效应管特性 | 漏源电阻 | 最大rds | 栅源电压 | 反馈上限-最大值 (Crss) | 接通时间-最大值(ton) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||
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 | IPG20N10S4L35ATMA1 | Infineon Technologies | 数据表 | 975 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-PowerVDFN | 8 | 2 | 18 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2012 | Automotive, AEC-Q101, OptiMOS™ | e3 | 活跃 | 1 (Unlimited) | EAR99 | Tin (Sn) | 43W | 未说明 | not_compliant | 未说明 | 43W | 3 ns | 2 N-Channel (Dual) | 35m Ω @ 17A, 10V | 2.1V @ 16μA | 无卤素 | 1105pF @ 25V | 17.4nC @ 10V | 2ns | 13 ns | 20A | 16V | 100V | 逻辑电平门 | ROHS3 Compliant | 含铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDMS7700S | ON Semiconductor | 数据表 | 12163 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 211mg | SILICON | 12A 22A | 2 | 58 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 7.5MOhm | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 1W | R-PDSO-N6 | 2 | Dual | 增强型MOSFET | 1W | 2 N-Channel (Dual) | SWITCHING | 7.5m Ω @ 12A, 10V | 3V @ 250μA | 1750pF @ 15V | 28nC @ 10V | 9.2ns | 6.8 ns | 30A | 1V | 20V | 30V | 40A | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.8 V | 800μm | 5mm | 6mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | ECH8654-TL-H | ON Semiconductor | 数据表 | 74843 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 8-SMD, Flat Lead | YES | 8 | SILICON | 2 | 92 ns | 150°C TJ | Tape & Reel (TR) | 2007 | e6 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Tin/Bismuth (Sn/Bi) | 1.5W | ECH8654 | 8 | Dual | 增强型MOSFET | 1.5W | 14 ns | 2 P-Channel (Dual) | 38m Ω @ 3A, 4.5V | 无卤素 | 960pF @ 10V | 11nC @ 4.5V | 55ns | 20V | 68 ns | 5A | 10V | 5A | 40A | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 900μm | 2.9mm | 2.3mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | DMN5L06VK-7 | Diodes Incorporated | 数据表 | 1000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 19 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 2Ohm | 50V | 250mW | FLAT | 260 | 280mA | 40 | DMN5L06VK | 6 | 不合格 | Dual | 增强型MOSFET | 250mW | 2 N-Channel (Dual) | SWITCHING | 2 Ω @ 50mA, 5V | 1V @ 250μA | 50pF @ 25V | 280mA | 1V | 20V | 50V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 5 pF | 600μm | 1.6mm | 1.2mm | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDMC7200 | ON Semiconductor | 数据表 | 48383 In Stock | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | ACTIVE (Last Updated: 5 days ago) | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 186mg | SILICON | 38 ns | 2 | 6A 8A | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | 900mW | 无铅 | 未说明 | 未说明 | 2 | Dual | 增强型MOSFET | 排水源头 | 13 ns | 700mW 900mW | 2 N-Channel (Dual) | SWITCHING | 23.5m Ω @ 6A, 10V | 3V @ 250μA | 660pF @ 15V | 10nC @ 10V | 4ns | 6 ns | 8A | 20V | 6A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 30 pF | 800μm | 3mm | 3mm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8200 | ON Semiconductor | 数据表 | 50 In Stock | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | ACTIVE (Last Updated: 1 week ago) | Gold | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 186mg | SILICON | 8A 12A | 2 | 38 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 20MOhm | 900mW | 无铅 | 未说明 | 未说明 | 不合格 | Dual | 增强型MOSFET | 2.2W | DRAIN-SOURCE | 700mW 900mW | 2 N-Channel (Dual) | SWITCHING | 20m Ω @ 6A, 10V | 3V @ 250μA | 660pF @ 15V | 10nC @ 10V | 4ns | 6 ns | 8A | 2.3V | 20V | 8A | 30V | 40A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 2.3 V | 30 pF | 30ns | 750μm | 3mm | 3mm | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||
 | NTMFD4C20NT1G | ON Semiconductor | 数据表 | 61848 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 24 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 8-PowerTDFN | YES | 8 | 9.1A 13.7A | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 活跃 | 1 (Unlimited) | EAR99 | 1.15W | 8 | Dual | 1.09W 1.15W | 2 N-Channel (Dual) | 7.3m Ω @ 10A, 10V | 2.1V @ 250μA | 无卤素 | 970pF @ 15V | 9.3nC @ 4.5V | 30V | 13.7A | 20V | 27.4A | METAL-OXIDE SEMICONDUCTOR | Standard | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CSD86350Q5D | Texas Instruments | 数据表 | 12726 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 4 days ago) | Gold, Tin | 表面贴装 | 表面贴装 | 8-PowerLDFN | 8 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e3 | yes | 活跃 | 1 (Unlimited) | 9 | EAR99 | Matte Tin (Sn) | 13W | 260 | 1 | 1.27mm | CSD86350 | 9 | 1.3V | 12V | 开关稳压器 | Dual | 13W | 9 ns | 2 N-Channel (Half Bridge) | 22V | 6m Ω @ 20A, 8V | 2.1V @ 250μA | 脉宽调制 | 1870pF @ 12.5V | 10.7nC @ 4.5V | 23ns | 40mA | 25V | 21 ns | BUCK | 40A | 1.4V | 8V | 1500kHz | 25V | 逻辑电平门 | 1.3 V | 1.5mm | 5mm | 6mm | 1.5mm | 无 | 无SVHC | ROHS3 Compliant | 含铅 | |||||||||||||||||||||||||||||||||||||||||||||||
| DMN2400UV-7 | Diodes Incorporated | 数据表 | 200 In Stock | - | 最小起订量: 1 最小包装量: 1 | 14 Weeks | Tin | 表面贴装 | 表面贴装 | SOT-563, SOT-666 | 6 | 3.005049mg | SILICON | 2 | 13.74 ns | -55°C~150°C TJ | Digi-Reel® | 2017 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | 500mOhm | HIGH RELIABILITY, LOW THRESHOLD | 530mW | FLAT | 6 | Dual | 增强型MOSFET | 530mW | 4.06 ns | 2 N-Channel (Dual) | SWITCHING | 480m Ω @ 200mA, 5V | 900mV @ 250μA | 36pF @ 16V | 0.5nC @ 4.5V | 7.28ns | 20V | 10.54 ns | 1.33A | 900mV | 12V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 600μm | 1.7mm | 1.25mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | NTMD6N03R2G | ON Semiconductor | 数据表 | 360000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 2 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2 | 45 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2004 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 32MOhm | 30V | 2W | 鸥翼 | 260 | 6A | 40 | NTMD6N03 | 8 | 不合格 | 增强型MOSFET | 2W | 1.29W | 2 N-Channel (Dual) | SWITCHING | 32m Ω @ 6A, 10V | 2.5V @ 250μA | 950pF @ 24V | 30nC @ 10V | 22ns | 45 ns | 6A | 1.8V | 20V | 6A | 30V | 30A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDMS3669S | ON Semiconductor | 数据表 | 243 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 171mg | SILICON | 13A 18A | 2 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2009 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 2.5W | FLAT | R-PDSO-F6 | 增强型MOSFET | 排水源头 | 1W | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 10m Ω @ 13A, 10V | 2.7V @ 250μA | 1605pF @ 15V | 24nC @ 10V | 3ns | 3 ns | 60A | 20V | 13A | 0.01Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 55 pF | 1.1mm | 5mm | 5.9mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | CSD87381P | Texas Instruments | 数据表 | 38265 In Stock | - | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 3 days ago) | Gold | 表面贴装 | 表面贴装 | 5-LGA | 5 | 16.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | e4 | yes | 活跃 | 1 (Unlimited) | 5 | EAR99 | 4W | UNSPECIFIED | UNSPECIFIED | 260 | 1 | 未说明 | CSD87381 | 1 | 40A | 12V | 开关稳压器 | Single | 4W | 2 N-Channel (Half Bridge) | 24V | 16.3m Ω @ 8A, 8V | 1.9V @ 250μA | 15A | 脉宽调制 | 564pF @ 15V | 5nC @ 4.5V | 16.3ns | 30V | 2.9 ns | BUCK | 15A | 8V | 30V | 逻辑电平门 | 480μm | 3mm | 2.5mm | 400μm | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS3620S | ON Semiconductor | 数据表 | 1100 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | ACTIVE (Last Updated: 3 days ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 90mg | SILICON | 17.5A 38A | 2 | 41 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 1W | FDMS3620S | R-PDSO-N6 | Dual | 增强型MOSFET | 2.5W | 排水源头 | 2 N-Channel (Dual) Asymmetrical | SWITCHING | 4.7m Ω @ 17.5A, 10V | 2V @ 250μA | 1570pF @ 13V | 26nC @ 10V | 38A | 12V | 17.5A | 0.0047Ohm | 25V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.05mm | 5.1mm | 6.1mm | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDME1034CZT | ON Semiconductor | 数据表 | 10000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 6-UFDFN Exposed Pad | 6 | 25.2mg | SILICON | 3.8A 2.6A | 2 | 33 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e4 | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | ESD PROTECTION | 1.4W | Dual | 增强型MOSFET | 1.3W | DRAIN | 600mW | N and P-Channel | SWITCHING | 66m Ω @ 3.4A, 4.5V | 1V @ 250μA | 300pF @ 10V | 4.2nC @ 4.5V | 4.8ns | 20V | N-CHANNEL AND P-CHANNEL | 16 ns | 3.8A | 700mV | 8V | 3.4A | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 700 mV | 40 pF | 500μm | 1.6mm | 1.6mm | 无 | 无SVHC | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | TC6320K6-G | Microchip Technology | 数据表 | 100 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | Tin | 表面贴装 | 表面贴装 | 8-VDFN Exposed Pad | 8 | 37.393021mg | SILICON | 2 | 20 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | DUAL | 260 | 40 | TC6320 | 2 | 增强型MOSFET | 10 ns | N and P-Channel | SWITCHING | 7 Ω @ 1A, 10V | 2V @ 1mA | 110pF @ 25V | 15ns | N-CHANNEL AND P-CHANNEL | 15 ns | 5.2A | 7Ohm | 200V | METAL-OXIDE SEMICONDUCTOR | Standard | 1.37mm | 4.89mm | 3.91mm | 无 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BSL308CH6327XTSA1 | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | PG-TSOP-6-6 | 2.3A 2A | -55°C~150°C TJ | Tape & Reel (TR) | 2013 | Automotive, AEC-Q101, OptiMOS™ | 活跃 | 1 (Unlimited) | 150°C | -55°C | 500mW | 500mW | N and P-Channel Complementary | 57mOhm @ 2.3A, 10V | 2V @ 11μA | 无卤素 | 275pF @ 15V | 1.5nC @ 10V | 30V | 2A | -30V | 275pF | Logic Level Gate, 4.5V Drive | 44mOhm | 57 mΩ | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDS6875 | ON Semiconductor | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 187mg | SILICON | 6A | 2 | 98 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 30mOhm | -20V | 2W | 鸥翼 | -6A | Dual | 增强型MOSFET | 2W | 8 ns | 900mW | 2 P-Channel (Dual) | SWITCHING | 30m Ω @ 6A, 4.5V | 1.5V @ 250μA | 2250pF @ 10V | 31nC @ 5V | 15ns | 20V | 35 ns | -6A | -800mV | 8V | 6A | -20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||
 | IRF7905TRPBF | Infineon Technologies | 数据表 | 36 In Stock | - | 最小起订量: 1 最小包装量: 1 | 12 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 7.8A 8.9A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2008 | HEXFET® | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | 2W | 鸥翼 | IRF7905PBF | Dual | 增强型MOSFET | 2W | 2 N-Channel (Dual) | SWITCHING | 21.8m Ω @ 7.8A, 10V | 2.25V @ 25μA | 600pF @ 15V | 6.9nC @ 4.5V | 3.4 ns | 8.9A | 20V | 0.0171Ohm | 30V | 71A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.4986mm | 4.9784mm | 3.9878mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMD4N03R2G | ON Semiconductor | 数据表 | 2000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 36 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | YES | 8 | SILICON | 2 | 16 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 48MOhm | 30V | 2W | 鸥翼 | 260 | 4A | 40 | NTMD4N03 | 8 | Dual | 增强型MOSFET | 2W | 7 ns | 2 N-Channel (Dual) | SWITCHING | 60m Ω @ 4A, 10V | 3V @ 250μA | 400pF @ 20V | 16nC @ 10V | 14ns | 10 ns | 4A | 20V | 4A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 1.5mm | 5mm | 4mm | 无 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||
 | 2N7002BKS,115 | Nexperia USA Inc. | 数据表 | 5875 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 300mA | 2 | 150°C TJ | Tape & Reel (TR) | 2010 | Automotive, AEC-Q101, TrenchMOS™ | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 鸥翼 | 未说明 | 未说明 | 6 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 295mW | 2 N-Channel (Dual) | SWITCHING | 1.6 Ω @ 500mA, 10V | 2.1V @ 250μA | 50pF @ 10V | 0.6nC @ 4.5V | 60V | 0.3A | 60V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | FDC6420C | ON Semiconductor | 数据表 | 1 In Stock | - | 最小起订量: 1 最小包装量: 1 | 10 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 6 | 36mg | SILICON | 3A 2.2A | 2 | 10 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2017 | PowerTrench® | e3 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 70MOhm | TIN (SN) | 700mW | 鸥翼 | 260 | 3A | 30 | 2 | Dual | 增强型MOSFET | 960mW | N and P-Channel | SWITCHING | 70m Ω @ 3A, 4.5V | 1.5V @ 250μA | 324pF @ 10V | 4.6nC @ 4.5V | 12ns | N-CHANNEL AND P-CHANNEL | 12 ns | 3A | 900mV | 12V | 3A | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 900 mV | 900μm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||
| NTMD3P03R2G | ON Semiconductor | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 1 day ago) | Tin | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 2.34A | 2 | 45 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | 活跃 | 1 (Unlimited) | 8 | EAR99 | 85MOhm | 雪崩 额定 | -30V | 2W | 鸥翼 | -3.05A | NTMD3P03 | 8 | 增强型MOSFET | 2W | 16 ns | 730mW | 2 P-Channel (Dual) | SWITCHING | 85m Ω @ 3.05A, 10V | 2.5V @ 250μA | 750pF @ 24V | 25nC @ 10V | 16ns | 30V | 45 ns | -3.05A | 20V | -30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | -1.7 V | 135 pF | 1.5mm | 5mm | 4mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||
 | DMG6602SVTQ-7 | Diodes Incorporated | 数据表 | 860 In Stock | - | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | SILICON | 3.4A 2.8A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2014 | e3 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 840mW | DUAL | 鸥翼 | 未说明 | 未说明 | AEC-Q101 | R-PDSO-G6 | 2 | 增强型MOSFET | 840mW | N and P-Channel | SWITCHING | 60m Ω @ 3.1A, 10V | 2.3V @ 250μA | 400pF @ 15V | 13nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 2.8A | 20V | 0.06Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 150°C | Standard | 80 pF | 1mm | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
 | DMP3085LSD-13 | Diodes Incorporated | 数据表 | 13 In Stock | - | 最小起订量: 1 最小包装量: 1 | 23 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 3.9A | 2 | 31 ns | -55°C~150°C TJ | Digi-Reel® | 2013 | e3 | 活跃 | 1 (Unlimited) | 8 | EAR99 | Matte Tin (Sn) | HIGH RELIABILITY | 1.1W | 鸥翼 | 260 | 30 | AEC-Q101 | 2 | 增强型MOSFET | 1.1W | 4.8 ns | 2 P-Channel (Dual) | SWITCHING | 70m Ω @ 5.3A, 10V | 3V @ 250μA | 563pF @ 25V | 11nC @ 10V | 5ns | 30V | 14.6 ns | -3.9A | 20V | 0.07Ohm | -30V | METAL-OXIDE SEMICONDUCTOR | 150°C | 逻辑电平门 | 1.7mm | 4.95mm | 3.95mm | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||
 | BSC0911NDATMA1 | Infineon Technologies | 数据表 | 300 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 18 Weeks | Tin | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | SILICON | 2 | 25 ns | 18A 30A | -55°C~150°C TJ | Cut Tape (CT) | 2013 | OptiMOS™ | e3 | no | 活跃 | 1 (Unlimited) | 6 | EAR99 | 1W | R-PDSO-N6 | Dual | 增强型MOSFET | 2.5W | 排水源头 | 2 N-Channel (Dual) Asymmetrical | 3.2m Ω @ 20A, 10V | 2V @ 250μA | 1600pF @ 12V | 12nC @ 4.5V | 5.4ns | 4 ns | 30A | 20V | 25V | METAL-OXIDE SEMICONDUCTOR | Logic Level Gate, 4.5V Drive | 无 | ROHS3 Compliant | 无铅 |
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19.843875
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
8.215487
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Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
0.452787
-
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
6.474760
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
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分类:Transistors - FETs, MOSFETs - Arrays
16.118916